METHOD FOR FORMING BULK SILICON ELEMENTS FOR MICROSYSTEM TECHNOLOGY DEVICES AND A PRODUCTION LINE FOR IMPLEMENTING THE METHOD Russian patent published in 2023 - IPC H01L21/306 

FIELD: microsystem technology device.

SUBSTANCE: method of forming a three-dimensional element for microsystem technology device. Method includes formation of a mask for anisotropic etching on the front side and on the back side of two layers; treating silicon in an aqueous solution containing an oxidizing component for silicon and an etching component for silicon oxide before forming an electrically conductive layer; at least two oxidation cycles followed by etching of silicon membrane oxide after electrochemical etching and formation of a silicon membrane; formation of a bulk structure contour by through one-sided plasma-chemical etching through a previously formed mask on the reverse side of the plate.

EFFECT: production line for forming a three-dimensional element for microsystem technology devices includes an installation for electrochemical anisotropic self-stopping silicon etching, in which there is a tooling for sealing the back side of the silicon wafer and supplying an electrical signal to the doped silicon area during self-stopping liquid chemical etching.

13 cl, 4 dwg