METHODS FOR NONDESTRUCTIVE INFORMATION READING FROM FERROELECTRIC MEMORY ELEMENTS Russian patent published in 2010 - IPC G11B9/02 G11C11/22 G11C7/00 

FIELD: physics; computer engineering.

SUBSTANCE: invention relates to computer engineering and can be used in computer memory for different purposes, in making new-generation video and audio devices, in designing content addressed memory systems and designing direct access data banks. The method for nondestructive reading information from a ferroelectric memory cell fitted with electrodes involves the following operations: reading electrical voltage is applied across electrodes to generate elastic deformation of the ferroelectric memory cell and detecting the said elastic deformation using a floating gate and/or conducting channel field effect transistor made from material with piezoelectric properties and degree and nature of polarisation of the ferroelectric memory cell is determined from the value of current flowing through the transistor. The ferroelectric memory element contains a field effect transistor and a piezoelectric element which is the memory cell. The floating gate is based on piezoelectric material. The memory cell has a three-layered structure consisting of two electrodes between which there is a piezoelectric component made from ferroelectric material and lying on top of the floating gate of the transistor.

EFFECT: faster information exchange.

20 cl, 22 dwg, 2 ex