FIELD: computer science.
SUBSTANCE: memory cell, containing three-layer structure, including two electrodes, between which a functional zone is located, as electrodes metal and/or semiconductor and/or conducting polymer and/or conducting and optically transparent oxide or sulfide are used, and functional zone is made of organic, metal-organic and non-organic materials with different types of active elements built in molecular and/or crystalline structure, and also their combinations with each other and/or clusters on their basis, which change their condition or position under effect from outside electrical field and/or light radiation.
EFFECT: higher efficiency, broader functional capabilities, higher manufacturability.
25 cl, 24 dwg
Title | Year | Author | Number |
---|---|---|---|
FERROELECTRIC OR ELECTRET MEMORIZING CONTOUR | 2002 |
|
RU2269830C1 |
METHODS FOR NONDESTRUCTIVE INFORMATION READING FROM FERROELECTRIC MEMORY ELEMENTS | 2006 |
|
RU2383945C2 |
SEMICONDUCTOR THIN FILMS OF FULLERENE [60] AND USE THEREOF | 2012 |
|
RU2583375C2 |
ELECTROCHEMICAL SYSTEM ON PLASTIC SUBSTRATE | 2006 |
|
RU2420772C2 |
ELECTRODE FOR ELECTROCHEMICAL ELECTRO-DRIVE DEVICES | 2006 |
|
RU2411560C2 |
ELECTRICALLY ADDRESSED DEVICE , ELECTRICAL ADDRESSING METHOD, AND APPLICATION OF THIS DEVICE AND THIS METHOD | 1998 |
|
RU2182732C2 |
TWO-COMPONENT ELECTRON-SELECTIVE BUFFER LAYER AND PHOTOVOLTAIC CELLS BASED THEREON | 2012 |
|
RU2595342C2 |
TRANSPARENT LAYER WITH HIGH ELECTRICAL CONDUCTIVITY CONTAINING METAL LATTICE WITH OPTIMISED ELECTROCHEMICAL STABILITY | 2007 |
|
RU2468404C2 |
ENCAPSULATING BARRIER MULTILAYER STRUCTURE | 2012 |
|
RU2618824C2 |
ELECTRODE AND CELL DEVICE | 2001 |
|
RU2265677C2 |
Authors
Dates
2005-07-20—Published
2001-08-13—Filed