MEMORY CELL Russian patent published in 2005 - IPC

Abstract RU 2256957 C2

FIELD: computer science.

SUBSTANCE: memory cell, containing three-layer structure, including two electrodes, between which a functional zone is located, as electrodes metal and/or semiconductor and/or conducting polymer and/or conducting and optically transparent oxide or sulfide are used, and functional zone is made of organic, metal-organic and non-organic materials with different types of active elements built in molecular and/or crystalline structure, and also their combinations with each other and/or clusters on their basis, which change their condition or position under effect from outside electrical field and/or light radiation.

EFFECT: higher efficiency, broader functional capabilities, higher manufacturability.

25 cl, 24 dwg

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RU 2 256 957 C2

Authors

Kriger Ju.G.

Judanov N.F.

Dates

2005-07-20Published

2001-08-13Filed