FIELD: physics.
SUBSTANCE: invention relates to micro- and nanoelectronics, and specifically to memory devices made using micro- and nano-electronic methods. The memory cell includes two electrodes with a dielectric layer placed between them. The dielectric layer has defects which provide electrical conduction by tunneling carriers in the defects, and contains semiconductor material impurities near one of the electrodes which provide for acquisition, storage and removal of electric charge, which blocks current from flowing in the defects of the dielectric layer.
EFFECT: design of a two-electrode nonvolatile reprogrammable memory cell with reproducible parametres, using the effect of electrical charge storage.
6 dwg
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