FIELD: computer engineering.
SUBSTANCE: magnetoelectric element for non-volatile memory devices is a heterostructure formed by layers of antiferromagnetic and multiferroic materials in such a way that a layer of antiferromagnetic material is deposited on the surface of the piezoelectric substrate through a layer of multiferroic material. Constant voltage source is connected to electrodes, one of which is placed on free surface of piezoelectric substrate, and the other is on the free surface of the layer of antiferromagnetic material, and the pulse voltage source is connected to electrodes placed on side surfaces of the heterostructure, perpendicular to the direction of polarization of the piezoelectric substrate.
EFFECT: increased speed of switching between states "0" and "1" at low values of applied voltage.
4 cl, 5 dwg
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