PERMANENT MEMORY ELEMENT BASED ON CONDUCTIVE GETE FERROELECTRIC Russian patent published in 2022 - IPC H01L27/30 H01L29/86 H01L45/00 

FIELD: electronics.

SUBSTANCE: invention can be used in electronics, in particular in the creation of elements of permanent memory based on ferroelectric materials and in neuromorphic computing systems for recording and storing long-term information. A permanent memory element based on a conductive ferroelectric includes two electrodes and a dielectric layer between them, wherein one of the electrodes is made of a conducting germanium telluride ferroelectric, the dielectric layer is made of silicon dioxide with a thickness of less than 100 nm, and the second electrode is made of silicon with p-type conductivity, and the dielectric layer is formed by the oxidized surface of the p-Si electrode.

EFFECT: invention makes it possible to significantly simplify the implementation of a ferroelectric memory cell by using a conductive ferroelectric as one of the electrodes in a structure based on an industrial silicon substrate, thus ensuring easy integration of the proposed cell into industrial technological processes and suppressing the degradation of a ferroelectric by reducing the interfaces used between the ferroelectric material and other elements of the structure.

1 cl, 2 dwg, 1 ex