METHOD OF PRODUCTION OF HIGH PURITY CRYSTAL SILICON (VERSIONS) Russian patent published in 2010 - IPC C01B33/23 

Abstract RU 2385291 C1

FIELD: metallurgy.

SUBSTANCE: process is carried out in two stages in reactor of plasma furnace at temperature above 1500°C. Quartz grit as a silicon containing compound is introduced into the reactor at the first stage of reduction, while mixture of carbon monoxide with hydrogen taken at volume ratio 1:1 is introduced as a reducer. According to one version of the invention an anode is connected to a current conducting case of the reactor and to melted silicon, further quartz grit is added into the reactor; and mixture of methane, propane or acetylene with oxygen taken at volume ratio 2:1 is introduced into the reactor as a reducer. The process can be performed with alternate current of frequency above 5 kHZ.

EFFECT: production of high purity silicon by ecologically safe method with low losses and low prime cost.

3 cl, 3 ex

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RU 2 385 291 C1

Authors

Zaddeh Vitalij Viktorovich

Stenin Vasilij Vasil'Evich

Strebkov Dmitrij Semenovich

Dates

2010-03-27Published

2008-06-24Filed