FIELD: metallurgy.
SUBSTANCE: invention refers to obtaining a high pure silicon which can be used at production of solar elements. Pure silicon dioxide is melted at a temperature of 1900°C and a mixture of powders of pure silicon and silicon dioxide taken at a stoichiometric ratio is introduced into the melt. The resulted gaseous silicon monoxide is then reduced in a gaseous phase with pure methane at a temperature of 2300-2500°C and elementary silicon is produced.
EFFECT: allows to upgrade purity of processed silicon and to reduce its production cost.
1 ex, 1 tbl
| Title | Year | Author | Number |
|---|---|---|---|
| METHOD FOR PREPARATION OF HIGH-PURITY SILICON | 2008 |
|
RU2367600C1 |
| METHOD OF PRODUCTION OF HIGH PURITY CRYSTAL SILICON (VERSIONS) | 2008 |
|
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| METHOD OF DIRECT OBTAINING OF POLYCRYSTALLINE SILICON FROM NATURAL QUARTZ AND FROM ITS HIGHLY PURE CONCENTRATES | 2012 |
|
RU2516512C2 |
| METHOD OF OBTAINING HIGH PURITY SILICON | 2012 |
|
RU2497753C1 |
| METHOD FOR PRODUCTION OF MULTI- AND MONOCRYSTALLINE SILICON | 1999 |
|
RU2173738C1 |
| METHOD OF PRODUCING HIGH-PURITY SILICON PELLETS | 2011 |
|
RU2477684C1 |
| METHOD OF PRODUCING HIGH-PURITY SILICON GRANULES | 2009 |
|
RU2405674C1 |
| METHOD FOR PREPARING SILICON | 2013 |
|
RU2542274C1 |
| METHOD OF PRODUCTION OF METALLIC SILICON | 1999 |
|
RU2160705C2 |
| METHOD FOR PROCESSING LEUCOXENE CONCENTRATE AND DEVICE THEREFOR | 2014 |
|
RU2586190C1 |
