SEMICONDUCTOR RADIATION DETECTOR OPTIMISED FOR DETECTION OF VISIBLE LIGHT Russian patent published in 2010 - IPC H01L31/109 H01L27/148 

FIELD: physics.

SUBSTANCE: semiconductor radiation detector comprises substrate of semiconductor material, on the first side of which the following components are arranged in listed order: layer of modified inner gate from semiconductor with electric conductivity of the second type, locking later from semiconductor with electric conductivity of the first type and pixel semiconductor areas of alloying with electric conductivity of the second type. Pixel alloying areas are adapted to development of pixels (image elements) that correspond to them at least at one value of pixel voltage applied. Device comprises the first contact from semiconductor with electric conductivity of the first type. Specified value of pixel voltage is identified as difference of potentials between pixel alloying and the first contact. Substrate has electric conductivity of the first type. On the second side of substrate, which is opposite to the first side, there is no conducting rear layer available, which is usually used to discharge secondary charges from active area of detector and as window for input of radiation.

EFFECT: invention makes it possible to develop semiconductor radiation detector comprising modified inner gate, which eliminates problems created by conducting rear layer, also to produce structure for semiconducting radiation detector, in which signal charge may be erased with low voltage, and to obtain facilities for more complete separation of charges and signal charges generated by surface.

30 cl, 44 dwg