OFF-SET TOP PIXEL ELECTRODE CONFIGURATION Russian patent published in 2013 - IPC H01L27/32 G02F1/13 

FIELD: physics.

SUBSTANCE: multilayer electronic structure comprising a substrate bearing at least three conducting layers, adjacent ones of said conducting layers being separated by a dielectric layer, a first one of said conducting layers forming drain and source electrodes of a thin film transistor (TFT) for driving a pixel of an active matrix optoelectronic device, an intermediate second one of said conducting layers forming a gate electrode of said transistor and a first plate of a capacitor for storing charge to maintain an electrical state of said active matrix pixel, and a third one of said conducting layers forming a pixel electrode as a second plate of said capacitor, wherein said pixel electrode is laterally positioned such that it is offset in a vertical direction from said gate electrode and such that it overlaps in a vertical direction with said first plate and at least a gate electrode of another thin film transistor for driving a neighbouring pixel of the active matrix optoelectronic device.

EFFECT: improved operating characteristics of the device, such as high diffusion capacitance.

5 cl, 7 dwg