SEMICONDUCTOR RADIATION DETECTOR WITH MODIFIED INTERNAL GATE STRUCTURE Russian patent published in 2009 - IPC H01L27/146 

FIELD: physics; conductors.

SUBSTANCE: invention relates to the technology of making semiconductor radiation detectors. The semiconductor radiation detector comprises a conductive backside layer of first conductivity type and a bulk layer. At the opposite side of the conductive backside layer there is a modified internal gate layer of second conductivity type, a barrier layer of the first conductivity type and a doped region of image elements (pixels) of second conductivity type. The pixel doping region is made with possibility of connecting to pixel voltage, which is defined as potential which is measured relative potential of the conductive backside layer, and which creates a potential minimum in the material of the detector for trapping signal charges.

EFFECT: invention allows for designing a semiconductor radiation detector which is characterised by high accuracy of measurements, and less prone to effect of leakage current.

30 cl, 35 dwg