FIELD-EFFECT TRANSISTOR USING OXIDE FILM TO TRANSMIT INFORMATION AND PREPARATION METHOD THEREOF Russian patent published in 2010 - IPC H01L29/786 H01L21/336 

FIELD: physics.

SUBSTANCE: in a field-effect transistor which includes an oxide film as a semiconductor layer, the oxide film has a channel part, a source part and a drain part, and concentration of one of hydrogen or deuterium in the source part and in the drain part exceeds that in the channel part.

EFFECT: invention enables to establish connection between the conducting channel of a transistor and each of sources and drain electrodes, thereby reducing change in parameters of the transistor.

9 cl, 13 dwg, 6 ex