FIELD: physics.
SUBSTANCE: photocell has a single-crystal silicon wafer with hole or electron conduction on which there are n+ and p+ type semiconductor layers with a p-n junction and a transparent semiconductor layer in which there are metal nanoparticles, where each particle is a depression (well), and between the nanoparticles and he surface of the p-n junction of the wafer there is a thin dielectric layer which is less than 10 nm thick. The proposed high-efficiency photocell has improved fixation of metal nanoparticles on the surface of the silicon wafer and larger area for interaction of metal nanoparticles with the silicon surface, since each particle in a depression (well). Also such an ordered structure of the surface (of the order of 100 nm) enables to obtain an extra antireflection layer.
EFFECT: improved properties of the photocell.
1 dwg, 1 ex
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