FIELD: electrical engineering.
SUBSTANCE: invention relates to the technology of manufacturing semiconductor devices, including solar photoelectric cells (SPC). Essence of the method is as follows. To reduce energy costs and reduce the geometric dimensions of nanostructures formed on the silicon wafer surface, before laser treatment, a thin optically transparent dielectric film is formed on the surface of the plate, after which laser radiation is processed by nanosecond wavelengths from 193 to 355 nm.
EFFECT: technical result of the invention is the possibility of creating on a silicon surface a uniform, nanostructured, crystalline, columnar surface with the aid of pulsed laser radiation with an energy density and a number of pulses substantially smaller than in known analogous methods.
4 cl, 3 dwg, 1 ex
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