FIELD: electrical engineering.
SUBSTANCE: double-sided operating surface photoelectric converter (PC) comprises diode structures, each with n+-p (p+-n) junction on face surface of silicon plate and isotype p-p+ (n-n+) junction in base area on rear surface of said silicon plate. Photo converter thickness is commensurable with diffusion length of minority current carriers in base area. Diode structures with n+-p (p+-n) junctions on PC face surface and isotype p-p+ (n-n+) junctions on PC rear surface represent separate sections, not interconnected by metal contacts.
EFFECT: lower costs, higher efficiency.
4 cl, 2 dwg, 2 ex
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