SEMICONDUCTOR PHOTOELECTRIC GENERATOR AND METHOD OF MAKING SAID GENERATOR Russian patent published in 2009 - IPC H01L31/42 B82B1/00 B82B3/00 

FIELD: physics.

SUBSTANCE: semiconductor photoelectric generator has a substrate, diode structure from semiconductor layers, antireflection coating, metallic contacts, several layers are deposited on the substrate, forming diode planar n⁺-p-p⁺ (p⁺-n-n⁺); n-p structure, connected in series in the direction of propagation of radiation. Layers of the same type contain metallic nanoclusters with size varying from 5 to 38 nm with concentration of nanoclusters in the said layers not exceeding (1 to 10)·10^-2 volume parts. Distance between nanoclusters and layers of the other type, which are semiconductor nanocrystals, is not more than 1200 nm. One or two linear dimensions of each diode structure does not exceed the diffusion distance of minority carriers in the base region, and the thickness of the diode structure in the direction of propagation of radiation is inversely proportional to maximum coefficient of absorption of radiation in the semiconductor material. The method of making a planar semiconductor photoelectric generator involves making a diode structure from semiconductor layers on a semiconductor substrate, depositing antireflecting coating and metallisation. By successively depositing semiconductor layers, several layers with thickness varying from 8 nm to 20 mcm are formed, which form diode planar n⁺-p-p⁺ (p⁺-n-n⁺); n-p structure. In layers of the same type, metallic nanoclusters with size of 5 to 38 nm are introduced with concentration of nanoclusters in the said layers not exceeding (1 to 10)·10^-2 volume parts, and the layers of the other type are made in form of semiconductor nanocrystals, where distance between nanoclusters and said nanocrystals does not exceed 1200 nm. One or two linear dimensions of each diode structure does not exceed the diffusion distance of minority carriers in the base region, and the thickness of diode structures in the direction of propagation of radiation is inversely proportional to the maximum coefficient of absorption of radiation in the semiconductor material. The cut-off effect of reverse-biased junctions is eliminated, forming a series connection of structures in the direction of propagation of radiation. The cut-off effect of reverse-biased junctions can be eliminated by applying pulsed voltage across the formed multilayer planar matrix and reverse-biased junctions are broken down, forming a series connection of structures in the direction of propagation of radiation.

EFFECT: invention increases efficiency of converting electromagnetic energy.

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