FIELD: physics, semiconductors.
SUBSTANCE: invention relates to semiconductor devices sensitive to infrared radiation, and can be used in optical-electronic apparatus for various purposes, especially for wide-field heat direction finding or thermal imaging devices working in two spectral regions. The photodetector consists of n modules, where n≥3. Each module has a photosensitive element on the substrate of which there is a multi-element photosensitive line. Since the photosensitive elements are made in form of a trapezium, the modules can be joined such that, the photosensitive structure consisting of n photosensitive cells has the shape of a regular polygon whose side are formed by the photosensitive lines.
EFFECT: invention enables design of large-format multiple-module photosensitive structures of different configurations.
4 dwg
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