FIELD: microelectronics and optoelectronics.
SUBSTANCE: proposed integrated multicomponent infrared photodetector unit that can be used for recording signals in television transmitting cameras, robot artificial vision systems, night viewing devices, and the like has its cell with its silicon substrate 1 carrying sequentially disposed calcium fluoride dielectric layer 2; epitaxial silicon layer 3 wherein photo-signal processing circuit (multiplexer) with sub-gate insulator 4, gate (for instance, polysilicon) 5, and contacts 6, 7 is formed; then barium fluoride dielectric layer 8; and epitaxial photosensitive semiconductor (such as PbSn-Te<In>) layer wherein photocell 9 is formed; rear side of substrate bears clearing coating or interference filer 10.
EFFECT: enhanced radiation resistance, reliability, and speed of response; reduced power requirement and heat transfer.
1 cl, 1 dwg
| Title | Year | Author | Number |
|---|---|---|---|
| LAYER OF TOPOLOGICAL INSULATOR PbSnTe:In ON CRYSTAL SUBSTRATE AND METHOD FOR ITS MANUFACTURE | 2022 |
|
RU2783365C1 |
| PHOTODETECTOR UNIT | 2003 |
|
RU2244365C1 |
| PHOTODETECTOR (VERSIONS) AND PRODUCTION METHOD THEREOF | 2015 |
|
RU2611552C2 |
| MULTICHIP POLYCHROMATIC PHOTO RECEIVER (PR) WITH EXPANDED SPECTRAL RESPONSE OF QUANTUM EFFICIENCY | 2014 |
|
RU2564813C1 |
| HETEROEPITAXIAL SEMICONDUCTOR STRUCTURE FOR PHOTODETECTOR CELL | 1991 |
|
RU2034369C1 |
| SCHOTTKY-BARRIER PHOTODETECTOR MATRIX SENSITIVE IN SUB-MILLIMETER WAVEBAND | 2006 |
|
RU2304826C1 |
| METHOD OF MAGNIFIED IR BOUNDARY WAVE OF SCHOTTKY BARRIER DETECTOR, IR DETECTOR AND IR SENSITIVE PHOTODETECTOR ARRAY | 2006 |
|
RU2335823C2 |
| MULTICOMPONENT PHOTODETECTOR WITH LONG-WAVE ABSORPTION EDGE | 2000 |
|
RU2175794C1 |
| CAPACITIVE PRESSURE PICKUP | 2003 |
|
RU2251087C2 |
| SEMICONDUCTOR HETEROEPITAXIAL STRUCTURE WITH HIGH LIFE TIME | 1993 |
|
RU2045106C1 |
