MoO POWDER, METHODS OF MANUFACTURING PLATE FROM MoO POWDER (THEIR VERSIONS), ELEMENT AND METHOD OF MANUFACTURING THIN FILM FROM IT, METHOD OF SPUTTERING WITH APPLICATION OF SAID PLATE Russian patent published in 2010 - IPC C01G39/02 C04B35/495 C23C14/08 H01L51/54 H01L21/203 

FIELD: chemistry.

SUBSTANCE: invention can be used in manufacturing organic light-emitting diodes, liquid-crystal displays, plasma display panel, thin-film solar cell and other electronic and semi-conductor devices. Claimed is element, including target of ionic dispersion, where said target includes processed MoO₂ plate of high purity. Method of such plate manufacturing includes isostatic pressing of component consisting of more than 99% of stoichiometric MoO₂ powder into workpiece, sintering of said workpiece under conditions of supporting more than 99% of MoO₂ stoichiometry and formation of plate which includes more than 99% of stoichiometric MoO₂. In other version of said plate manufacturing component, consisting of powder, which contains more than 99% of stoichiometric MoO₂, is processed under conditions of hot pressing with formation of plate. Method of thin film manufacturing includes stages of sputtering of plate, which contains more than 99% of stoichiometric MoO₂, removal of MoO₂ molecules from plate and application of MoO₂ molecules on substrate. Also claimed is MoO₂ powder and method of said plate sputtering with application of magnetron sputtering, pulse laser sputtering, ionic-beam sputtering, triode sputtering and their combination.

EFFECT: invention allows to increase work of output of electron of ionic sputtering target material in organic light-emitting diodes.

16 cl, 5 ex