FIELD: electricity.
SUBSTANCE: use: for manufacturing of solid-state light-emitting diodes. The substance of the invention consists in the fact that a light-emitting diode comprises multiple layers, besides, the first layer from these multiple layers comprises a nanostructured surface, which comprises a quasiperiodic anisotropic array of extended ribbed elements, having a pattern of a wavy structure, besides, each ribbed element has a wave-shaped cross section and is aligned substantially in the first direction.
EFFECT: increased possibility to increase efficiency of a thin-film light-emitting diode, reduced losses of light and exclusion of uneven current distribution.
20 cl, 24 dwg
| Title | Year | Author | Number |
|---|---|---|---|
| POLARISER BASED ON ARRAY OF NANOCONDUCTORS | 2006 |
|
RU2413255C2 |
| METHOD FOR MANUFACTURING NANO-COLUMN HETEROSTRUCTURE BASED ON III-N COMPOUNDS | 2019 |
|
RU2758776C2 |
| SEMICONDUCTOR ELEMENT, MANUFACTURING METHOD OF SEMICONDUCTOR ITEM, AND MATRIX OF LIGHT-EMITTING DIODES, WHICH IS OBTAINED BY USING SUCH MANUFACTURING METHOD | 2007 |
|
RU2416135C2 |
| METHOD OF FORMING GALLIUM NITRIDE TEMPLATE WITH SEMIPOLAR (20-23) ORIENTATION ON SILICON SUBSTRATE AND SEMICONDUCTOR LIGHT-EMITTING DEVICE MADE USING SAID METHOD | 2013 |
|
RU2540446C1 |
| LIGHT-EMITTING SEMICONDUCTOR DEVICES WITH A GETTER LAYER | 2015 |
|
RU2672776C2 |
| CONTACT FOR SEMICONDUCTOR LIGHT-EMITTING DEVICE | 2008 |
|
RU2491683C2 |
| LIGHT EMITTING DEVICE BONDED TO A SUPPORT SUBSTRATE | 2012 |
|
RU2604956C2 |
| METHOD FOR FORMING ORDERLY UNDULATING NANOSTRUCTURES (VARIANTS) | 2003 |
|
RU2240280C1 |
| METHOD OF EPITAXIAL GROWTH OF INTERFACE BETWEEN MATERIALS FROM III-V GROUPS AND SILICON PLATE, WHICH PROVIDES NEUTRALIZATION OF RESIDUAL DEFORMATIONS | 2015 |
|
RU2696352C2 |
| METHOD FOR MANUFACTURING AN ELEMENT BASED ON FERROELECTRIC HAFNIUM OXIDE FOR SWITCHABLE OPTO- AND MICROELECTRONICS DEVICES | 2021 |
|
RU2772926C1 |
