ELECTRON MULTIPLYING STRUCTURE FOR USE IN VACUUM TUBE USING ELECTRON MULTIPLYING AS WELL AS VACUUM TUBE USING ELECTRON MULTIPLYING PROVIDED WITH SUCH ELECTRON MULTIPLYING STRUCTURE Russian patent published in 2016 - IPC H01J31/50 

FIELD: physics.

SUBSTANCE: invention relates to an electron multiplying structure for use in a vacuum tube using electron multiplying and to a vacuum tube using electron multiplying provided with such an electron multiplying structure. An electron multiplying structure is proposed for use in a vacuum tube using electron multiplying, the electron multiplying structure comprising an input surface to be directed towards the entrance window of the vacuum tube, an output surface to be directed towards the detection surface of the vacuum tube, where the electron multiplying structure is at least composed of a semiconductor material layer adjacent to the detection windows.

EFFECT: high secondary emission efficiency and simpler device.

20 cl, 6 dwg