FIELD: chemistry.
SUBSTANCE: invention relates to production of fluorine gas which can be used in production of semiconductors or liquid crystals. The method of producing fluorine gas involves a step for producing gaseous fluorine through separation on a section inside a gaseous fluorine production container (10) fitted with heating apparatus (9), filling each section with a fluoride of a high valence metal and heating the said metal fluoride. The high valence metal fluoride used is selected from MnFx (x = 3-4), K3NiFy (y = 6-7) and CeF4. Separation on the section inside the gaseous fluorine production container is carried out using a gas-permeable structural element which is a porous metal, or using a heat-conducting structural element in which a porous metal is placed between perforated metal plates.
EFFECT: invention enables industrial scale production of highly pure fluorine gas at low costs.
12 cl, 6 dwg, 6 tbl, 5 ex
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Authors
Dates
2010-08-20—Published
2005-09-22—Filed