TETRAFLUOROSILANE PRODUCTION PROCESS, METHOD FOR ASSAYING IMPURITIES IN TETRAFLUOROSILANE, AND GAS BASED THEREON Russian patent published in 2006 - IPC C01B33/107 B01D53/22 H01L21/205 H01L31/20 G01N21/35 G01N30/14 G08C23/06 H01B11/22 

Abstract RU 2274603 C2

FIELD: silicon compounds technology.

SUBSTANCE: tetrafluorosilane production process comprises following stages: (1) hexafluorosilicate heating; (2-1) reaction of tetrafluorosilane gas containing hexafluorodisiloxane formed in stage (1) with fluorine gas; (2-2) reaction of tetrafluorosilane gas containing hexafluorodisiloxane formed in stage (1) with fluorine-polyvalent metal compound; (2-3) reaction of tetrafluorosilane gas obtained in stage (2-1) with fluorine-polyvalent metal compound. Finally, high-purity tetrafluorosilane with 0.1 ppm by volume of hexafluorodisiloxane is obtained, which is applicable in manufacture of optical fiber, semiconductors, and sun battery elements.

EFFECT: reduced content of impurities in product.

24 cl, 1 dwg, 1 tbl, 9 ex

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RU 2 274 603 C2

Authors

Atobe Khitosi

Oka Masakazu

Kaneko Toraiti

Dates

2006-04-20Published

2002-07-11Filed