FIELD: electricity.
SUBSTANCE: frequency multiplier based on plasma nonlinearity mechanism includes reference frequency generator, cooling system, nonlinear working element, magnetic field source. In this structure, nonlinear working element represents semiconductor nanostructure with antenna system on crystal surface and with two-dimensional charged layer including defect(s) which represent any non-uniformity in topology or parametres of two-dimensional charged layer or its dielectric environment.
EFFECT: increase in frequency multiplier conversion effectiveness and decrease in its dimensions.
3 dwg
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