FIELD: chemistry.
SUBSTANCE: magnetic cobalt-manganese sulphide with giant magnetoresistance contains manganese, sulphur and cobalt in the following ratio, wt %: cobalt 10-20, manganese 40-30, sulphur 50.
EFFECT: invention enables to design microelectronic elements based on the giant magnetoresistance effect for a wide range of temperature and magnetic fields, cuts expenses on manufacturing materials with giant magnetoresistance.
2 dwg, 2 tbl
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Authors
Dates
2010-11-20—Published
2009-05-06—Filed