MAGNETORESISTIVE SENSOR Russian patent published in 2008 - IPC H01L43/08 

FIELD: automation; tachometers, non-destructive test units, displacement transducers, devices for metering alternating and static magnetic fields, direct and alternating currents.

SUBSTANCE: proposed magnetoresistive sensor characterized in extended range of operating magnetic fields up to strong ones (100 kOe) has minimum one sensing element disposed on insulating substrate and made of multilayer magnetic film built of alternating ferromagnetic and non-ferromagnetic metal layers of nanometric-range thickness; each ferromagnetic metal layer is discrete layer of ferromagnetic particles or clusters of Fe or Co, or Ni, or magnetic alloys based on them; thickness of each non-ferromagnetic metal layer is smaller than length of conduction electron free path but not less than 7 Å. Transition metal whose atoms are in exchange bond with those of ferromagnetic metal clusters is used as non-ferromagnetic metal to ensure super-paramagnetic properties and Kondo-like effect for multilayer magnetic film.

EFFECT: enhanced sensitivity at low temperatures, reduced dependence of output signal on sensor position relative to magnetic field direction, extended range of operating magnetic fields.

5 cl, 6 dwg