FIELD: electricity.
SUBSTANCE: installation of plasma-enhanced deposition to produce polycrystalline silicon includes chamber facility for deposition, facility to support target substrate (104), having deposition surface (106) and multiple burner facilities (102) with inductively bound plasma to produce multiple plasma torches for reaction of at least one reagent to produce a reaction product and deposit it on specified target substrate (104). Multiple burner facilities (102) are located at the fixed distance from specified target substrate. Facility for support moves specified target substrate (104) in direction from specified multitude of burner facilities with inductively bound plasma to provide for specified fixed distance between specified target substrate and specified multitude of burner facilities with inductively bound plasma.
EFFECT: improved operational characteristics.
39 cl, 5 dwg
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