METHOD OF MAKING ALUMINIUM NITRIDE FILM ON SAPPHIRE SUBSTRATE AND INSTALLATION FOR REALISING SAID METHOD Russian patent published in 2010 - IPC H01L21/205 

FIELD: physics, semiconductors.

SUBSTANCE: invention relates to technology of making aluminium nitride films. The method of making an aluminium nitride film on a sapphire substrate involves a process of depositing onto its pre-nitrated surface material of the source which is evaporated through electron-beam evaporation. The source is highly pure aluminium, whose vapour chemically reacts in the zone adjacent to the substrate with atomic nitrogen obtained from molecular nitrogen by splitting its molecules in high-frequency discharge plasma. The aluminium vapour is deposited onto the surface of the sapphire substrate under the effect of a directed electric field.

EFFECT: invention enables to obtain monocrystalline aluminium nitride films at low temperature (below 1200)°C on a relatively cheap sapphire substrate with diametre of up to 100 mm.

3 cl, 1 dwg