FIELD: chemistry.
SUBSTANCE: use to obtain oxide films of gallium oxide. Essence of the invention consists in the fact that in the developed method hydrogen is used as a carrier gas, and a mixture of hydrogen and oxygen is used as the plasma-forming gas, the substrate is placed and heated directly in the discharge zone, a residual gas pressure of 10-1 mbar is created in the plasma-chemical reactor, to create saturated steam pressure of 10-1 mm Hg above gallium source, container with gallium is heated to temperature of 1,150 °C, oxygen-hydrogen plasma with discharge power of 350 W is used for oxidation.
EFFECT: possibility of obtaining polycrystalline and monocrystalline gallium oxide films with low content of oxygen defects.
3 cl, 1 dwg
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