PSEUDO-DUAL-PORT MEMORY WITH SYNCHRONISATION FOR EACH PORT Russian patent published in 2010 - IPC G11C11/40 G11C7/10 G11C7/22 

Abstract RU 2405221 C2

FIELD: information technologies.

SUBSTANCE: pseudo-dual-port memory contains the first port, the second port and array of memory cells with six transistors. The first call to memory is initiated by means of anterior front of the first synchronising signal (ACLK) received along the first port. The second call to memory is initiated in response to anterior front of the second synchronising signal (BCLK) received along the second port. If anterior front of the second synchronising signal occurs in the first period of time, than the second call to memory is initiated immediately after completion of the first call to memory by pseudo-dual-port method. If anterior front of the second synchronising signal occurs later in the second period of time, than the second call to memory is delayed till the time after the second anterior front of the first synchronising signal. Duration of the first and second calls to memory does not depend on beats of synchronising signals.

EFFECT: possibility to control ordering of two operations with memory having two separate ports, every of which has its own input synchronising pulse.

37 cl, 16 dwg

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RU 2 405 221 C2

Authors

Dzung Chang Kho

Dates

2010-11-27Published

2006-11-17Filed