NANOSTRUCTURE, PRECURSOR OF NANOSTRUCTURE AND METHOD OF FORMING NANOSTRUCTURE AND PRECURSOR OF NANOSTRUCTURE Russian patent published in 2010 - IPC B82B1/00 B82B3/00 

FIELD: nanotechnologies.

SUBSTANCE: invention refers to nanostructures and methods of their growth. Method of forming nanostructure provides deposition of pack of layers on conducting substrate and growth of nanostructures on the above pack of layers; at that, the above pack of layers contains at least one intermediate layer and catalyst layer formed on the above at least one intermediate layer, and the above at least one intermediate layer is made from material which differs from the material of the above conducting substrate and material of the above catalyst layer; at that, the above pack of layers contains the materials allowing interdiffusion of the above layers.

EFFECT: obtaining nanostructures with controlled composition and properties.

14 cl, 44 dwg