NANOSTRUCTURED DEVICE AND METHOD OF MANUFACTURING NANOSTRUCTURES Russian patent published in 2016 - IPC C01B31/02 B82B1/00 B82B3/00 B82Y40/00 

FIELD: nanotechnology.

SUBSTANCE: invention can be used in the manufacture of analogue and/or digital electronic circuits. The nanostructured device (105) with a plurality of nanostructures (101) is obtained by precipitation of the lower layer (103) comprising a crystallographic structure of grains with a first average size, on the substrate (102), of the subsequent precipitation of the layer (104) of a catalyst containing a crystallographic structure of grains with a second average size which is larger than the first. The resulting package of layers is heated to a temperature sufficient for the growth of nanostructures and mutual diffusion between the lower layer (103) and the layer (104) of the catalyst. Then gas is fed, containing a reagent for contact with the layer (104) of the catalyst. The lower layer (103) is precipitated by sputtering or evaporation. The nanostructures (101) comprise a base adjacent to the layer (104) of the catalyst, a tip comprising a material of the layer (104) of the catalyst, and a body between them, comprising carbon. The material of the lower layer (103) has a higher melting point than the material of the layer (104) of the catalyst.

EFFECT: simplified process of manufacturing nanostructures by reducing the number of stages and creation of favourable conditions for growth, crystallisation and recrystallisation.

13 cl, 9 dwg