METHOD OF PRODUCING MESOPOROUS SILICON DIOXIDE Russian patent published in 2011 - IPC B01J32/00 C01B33/18 

FIELD: chemistry.

SUBSTANCE: invention relates to methods of producing mesoporous synthetic materials with controlled pore size. The engineering problem is obtaining mesoporous silicon dioxide with improved textural properties (specific surface area 1350-1401 m²/g; total pore volume 0.9-1.4 cm³/g; average pore diametre 2.7-3.3 nm with distribution thereof in a narrow range). The invention discloses a method of producing mesoporous silicon dioxide, involving preparation of an alkaline or ammonium solution of hexadecyl trimethylammonium bromide, addition of tetraethoxysilane and a tris-(trimethylsiloxy)silane as a textural property modifier, hydrothermal treatment of the formed gel, filtration, washing, drying and calcination of the residue at temperature not lower than 650°C. Molar ratio of tris-(trimethylsiloxy)silane, hexadecyl trimethylammonium bromide and liquid phase to tetraethoxysilane is equal to 1:(0.03-0.05), 1:(0.44-0.55) and 1:(95-200), respectively.

EFFECT: efficient method of producing mesoporous silicon dioxide.

2 cl, 8 dwg, 1 tbl, 12 ex