METHOD FOR DEEP PURIFICATION OF MONOSILANE Russian patent published in 2011 - IPC C01B33/04 B82B3/00 B01J20/283 

FIELD: chemistry.

SUBSTANCE: monosilane undergoes distillation to remove hydrocarbons having boiling point higher than that of monosilane. Monosilane is then purified from ethylene on active aluminium oxide or on platinum-, palladium-, ruthenium-, titanium- or zirconium-modified aluminium oxide, after which monosilane undergoes distillation to remove hydrocarbons having boiling point lower than that of ethylsilane. The purified monosilane is passed through nanosize polydispersed powder of organosilicon sorbent containing 47-54 wt % silicon dioxide and 52-45 wt % carbon, having packed density of not more than 0.2 g/cm² and total pore volume of not less than 0.95 cm³/g. Hydrocarbon absorption capacity of the sorbent is between 4.0 and 10 kg/kg.

EFFECT: invention enables to obtain monosilane with content of ethylene, ethylsilane less than 10 ppb and phosphine, arsine less than 0,02 ppb.

1 dwg