FIELD: electricity.
SUBSTANCE: method includes the first stage of increasing temperature of single-crystal substrate ZnTe up to the first temperature of thermal treatment T1 and maintenance of substrate temperature within specified time; and the second stage of gradual reduction of substrate temperature from the first temperature of thermal treatment T1 down to the second temperature of thermal treatment T2, lower than T1 with specified speed, in which T1 is established in the range of 700°C≤T1≤1250°C, T2 - in the range of T2≤T1-50, and the first and second stages are carried out in atmosphere of Zn, at the pressure of at least 1 kPa or more, at least 20 cycles or at least 108 hours.
EFFECT: invention makes it possible efficiently to eliminate part of Te deposits without considerable deterioration of efficiency and improvement of light transmission of single-crystal substrate ZnTe.
5 cl, 3 dwg
| Title | Year | Author | Number |
|---|---|---|---|
| METHOD TO PRODUCE SINGLE-CRYSTAL FILMS AND LAYERS OF TELLURIUM | 2010 |
|
RU2440640C1 |
| METHOD FOR GROWING SINGLE CRYSTALS OF SILICON CARBIDE WITH N-TYPE CONDUCTIVITY | 2021 |
|
RU2770838C1 |
| 0 |
|
SU1484191A1 | |
| SINGLE CRYSTAL DIAMOND MATERIAL | 2010 |
|
RU2519104C2 |
| PROCEDURE FOR GROWTH OF CdZnTe BY METHOD OF AHF (AXIAL HEAT FRONT), WHERE 0≤x≤1 OF DIAMETRE TO 150 mm | 2009 |
|
RU2434976C2 |
| SUBSTRATE CERAMIC LAMINATE | 2015 |
|
RU2678032C2 |
| METHOD OF PRODUCTION OF ATOMIC-THIN SINGLE-CRYSTAL FILMS | 2012 |
|
RU2511073C1 |
| METHOD OF PRODUCING COMPOSITE SUBSTRATE SIC AND METHOD OF MAKING A SEMICONDUCTOR SUBSTRATE | 2016 |
|
RU2720397C2 |
| PRODUCTION OF SINGLE-CRYSTAL WHITE DIAMOND | 2010 |
|
RU2558606C2 |
| SUBSTRATE FOR SOLAR CELL AND SOLAR CELL | 2011 |
|
RU2569902C2 |
