FIELD: chemistry.
SUBSTANCE: invention relates to technology of obtaining single crystal diamond material for electronics and jewellery production. Method includes growing single crystal diamond material by method of chemical precipitation from vapour or gas phase (CVD) on main surface (001) of diamond substrate, which is limited by at least one rib <100>, length of said at least one rib <100> exceeds the longest surface dimension, which is orthogonal to said at least one rib <100>, in ratio at least 1.3:1, and single crystal diamond material grows both on the normal to the main surface (001) and sideward from it, and during CVD process value α constitutes from 1.4 to 2.6, where α=(√3×growth rate in <001>) ÷ growth rate in <111>.
EFFECT: invention makes it possible to obtain larger in area diamond materials with low density of dislocations.
14 cl, 8 dwg, 3 ex
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