METHOD OF PRODUCING COMPOSITE SUBSTRATE SIC AND METHOD OF MAKING A SEMICONDUCTOR SUBSTRATE Russian patent published in 2020 - IPC H01L21/02 H01L21/20 

FIELD: manufacturing technology; production of composite materials.

SUBSTANCE: disclosed is a method of producing a composite SiC substrate 10, having monocrystalline 12 SiC layer on a polycrystalline SiC substrate 11, in which: monocrystalline SiC layer 12 is provided on one surface of holding substrate 21 containing Si, and support 14 of the monocrystalline SIC layer is prepared, then the polycrystalline SiC is grown on the monocrystalline SiC layer 12 using a physical or chemical means, and the SiC laminar material 15 is prepared, wherein monocrystalline SiC layer 12 and polycrystalline SiC substrate 11 are applied layer-by-layer on retaining substrate 21; and then retaining substrate 21 is removed by physical and/or chemical method.

EFFECT: when using the present invention, a SiC composite substrate having a single-crystal SiC layer with good crystallinity is obtained during a simple manufacturing process.

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