FIELD: power engineering.
SUBSTANCE: films and layers of tellurium with single-crystal structure are produced on crystal faces by means of tellurium conversion into a monatomic steam and growth of single-structure specimens from it, at the same time the process of deposition is carried out in atmosphere of hydrogen at PH2=1.8 atm, temperature of initial tellurium T2=600°C and temperature of substrate zone T1=400°C.
EFFECT: production of films and layers of tellurium of single-crystal structure at orienting substrates.
4 dwg
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