METHOD OF PRODUCTION OF ATOMIC-THIN SINGLE-CRYSTAL FILMS Russian patent published in 2014 - IPC H01L21/20 

FIELD: nanotechnology.

SUBSTANCE: invention relates to the field of nanotechnology and can be used for production of atomic-thin single-crystal films of various laminates. The essence of the invention consists in that the method of production of atomic-thin single-crystal films includes fixing of source layered single crystals on a substrate using the adhesive layer, the sequential cleavage of the laminated fragments form them to obtain a thin semi-transparent layer, plasma etching of this layer, using the ion flux with energy variable in the etching process, under control of the layer thickness during etching, and removing the adhesive layer by dissolving in the organic solvent before or after the etching process.

EFFECT: increase in the size of the atomic-thin single-crystal films, improving their electrophysical properties and the possibility of producing films on any substrates.

8 cl, 3 dwg