METHOD OF FORMING SEMICONDUCTOR PLATES DOPED ON ONE SIDE, PARTICULARLY SOLAR SEMICONDUCTOR PLATES, AND MANIPULATION SYSTEM FOR LOADING PROCESS TRAY WITH BATCHES OF SEMICONDUCTOR PLATES Russian patent published in 2011 - IPC H01L21/673 H01L21/677 H01L21/68 H01L21/683 H01L31/18 

FIELD: physics.

SUBSTANCE: half of the plates in form of a first stack are transferred from a transporting holder into a ready position outside said holder. The other half of the plates in form of a second stack are unloaded from the transporting holder. The second stack is turned such that semiconductor plates in the second stack are turned 180° relative the position of semiconductor plates in the first stack. The second stack of semiconductor plates is moved to the position of the first stack of semiconductor plates aligned relative the second stack, is merged with the first stack of semiconductor plates by adjoining non-doped sides of matched first and second stacks of semiconductor plates. The device for transporting the stacks is a vacuum gripper module having gripping bars and a centring device.

EFFECT: high density of packing in the process tray and high efficiency of the diffusion process.

6 cl, 12 dwg