VACUUM COMPLEX FOR THERMAL ANNEALING OF SEMICONDUCTOR WAFERS Russian patent published in 2022 - IPC H01L21/324 

FIELD: electronics.

SUBSTANCE: invention relates to the field of electronic technology and can be used in the processes of heat treatment of semiconductor wafers, for example, diffusion of ion-implanted materials in semiconductor structures. The essence of the invention lies in the fact that a vacuum complex for thermal annealing of semiconductor wafers containing a working chamber 1, including a heater 2, a plate holder 5, coupled with the first drive 6, and also including the first pumping module 8, while the vacuum complex also contains a cooling module 22, an overload chamber 10 is introduced, coupled with the working chamber 1 and including a manipulator 11 with the capture of plates 12, while the cooling module 22 is located in the overload chamber 10 and is made in the form of a housing 24 with a cavity 25, coupled with a refrigerant source 23, moreover, the first holes 26 are formed in the housing 24, located in the direction of the capture of the plates 12, in which the second holes 14 are made.

EFFECT: increase in the uniformity of cooling of semiconductor wafers.

3 cl, 2 dwg