HETEROSTRUCTURE FOR TRANSLUCENT PHOTOCATHODE Russian patent published in 2015 - IPC H01J1/35 H01L31/00 

FIELD: physics.

SUBSTANCE: claimed heterostructure comprises substrate of GaAs, first ply of GaAs of p-conductivity, second ply of AlGaAs of p-conductivity. Note here that first ply of AlGaAs is a locking composition of Al_xGa_1-xAs of p-conductivity with concentration P₁ of acceptor dopant. Active ply of GaAs features concentration P₂ of acceptor dopant. Second ply of AlGaAs is a buffer composition Al_yGa_1-yAs with concentration P₃ of acceptor dopant. Transition ply is arranged between active and buffer plies of p-conductivity and composition varying form GaAs to Al_yGa_1-yAs. Note here that aluminium content variation starting from the boundary with active ply to that with buffer ply is a monotone increasing and continuous function F₁ of transition ply depth. Acceptor dopant concentration is a monotone decreasing continuous function F₃ of transition ply depth starting from concentration P₂ nearby the boundary with active ply to concentration P₃ nearby the boundary with buffer ply.

EFFECT: higher quantum efficiency and integral response of photocathode.

2 cl, 3 dwg