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(19)

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2 704 214

(13)

(51)

IPC

H01S5/183(2006-01-01)

B82Y20/00(2011-01-01)

(21) (22)

Application

2016148713, 2016-12-13

(24)

Start date

2016-12-13

(22)

Actual filing date

2016-12-13

(45)

Published

2019-10-24

(72)

Inventor

Blokhin Sergey Anatol'EvichMaleev Nikolay Anatol'EvichKuz'Menkov Aleksandr GeorgievichVasil'Ev Aleksey PetrovichZadiranov Yury MikhailovichUstinov Viktor Mikhailovich

(73)

Holder

Federal'Noe Gosudarstvennoe Byudzhetnoe Uchrezhdenie Nauki Fisiko-Tekhnicheskiy Institute Im. A.F. Ioffe Rossiyskoy Akademii Nauk

VERTICAL-EMITTING LASER WITH INTRACAVITY CONTACTS AND DIELECTRIC MIRROR Russian patent published in 2019 - IPC H01S5/183 B82Y20/00

Abstract RU 2704214 C1

FIELD: physics.

SUBSTANCE: invention relates to semiconductor engineering. Semiconductor vertical-emitting laser with intracavity contacts comprises semi-insulating substrate (1) of GaAs, a lower undoped DBR (2), an intracavity contact layer (3) of n-type, an n-type composite lattice (5), optical resonator (6) comprising active region (7) based on at least three layers of In(Al)GaAs quantum wells (8), a p-type composite grid (9) comprising at least one oxide current aperture (10), p-type intracavity contact layer (11), high-alloy p-type phase-corrective contact layer (12) and upper dielectric DBR (14) based on SiO₂/Ta₂O₅.

EFFECT: technical result consists in reduction of electric resistance and threshold current at improvement of differential efficiency.

14 cl, 5 dwg

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RU 2 704 214 C1

Authors

Blokhin Sergey Anatol'Evich

Maleev Nikolay Anatol'Evich

Kuz'Menkov Aleksandr Georgievich

Vasil'Ev Aleksey Petrovich

Zadiranov Yury Mikhailovich

Ustinov Viktor Mikhailovich

Dates

2019-10-24—Published

2016-12-13—Filed