SEMICONDUCTOR X-RAY COMPOSITE DETECTOR Russian patent published in 2011 - IPC G01T1/24 

FIELD: physics.

SUBSTANCE: X-ray Si and Ge detectors lying one directly behind the other are used to detect radiation. The thin (about 0.5 mm) Si detector is closer to the source of ionising radiation and functions as the main detector of incident radiation with energy of up to 10 keV and as a photon detector of K photo-loss of the Ge detector at low energy of the primary radiation.

EFFECT: invention enables suppression of the K photo-loss peak of the Ge detector, preservation of the high probability of detecting a photon at the total absorption peak, which is characteristic for the Ge detector for photons with energy higher than 30 keV.

2 cl, 7 dwg