COMPOSITE SEMICONDUCTOR X-RAY DETECTOR Russian patent published in 2013 - IPC G01T1/00 

FIELD: physics.

SUBSTANCE: X-ray radiation is detected using a composite semiconductor X-ray detector which consists of two or more X-ray detectors, an electronic system which prevents detection of simultaneous pulses or summation of energies of simultaneously detected pulses. A Si detector is located closer to the radiation source and an AsGa or CdTe detector is located further from the radiation source. If an AsGa detector is used, the thickness of the Si detector must lie in the range of 0.2-1 mm, and in the range of 0.5-1.5 mm if a CdTe detector is used.

EFFECT: low probability of detecting photons in photo loss peaks of As and Ga for an AsGa detector far from the radiation source and photo loss peaks of Cd and Te for a CdTe detector far from the radiation source.