FIELD: electricity.
SUBSTANCE: in proposed method active object operates at temperature, which is normal for it, and identical reserve object is switched off. As active object fails, it is substituted with a reserve object, which is heated up to specified temperature of annealing of radiation defects of its semiconductor devices, but which does not result in irreversible fault of this object; additionally a substitution signal is generated as permissible level of active object elements degradation is achieved, then, using this substitution signal, reserve object is cooled down to temperature normal for operation of active object, and active object is substituted with cooled reserve object. Substituted active object is used as reserve object.
EFFECT: increased reliability of systems of semiconductor objects redundancy by reduction of degradation of reserve object is the technical result of invention.
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