METHOD FOR RADIATION-INDUCED DETERMINATION OF POTENTIALLY UNSTABLE SEMICONDUCTOR PRODUCTS Russian patent published in 2009 - IPC G01R31/26 

FIELD: electricity.

SUBSTANCE: invention refers to the field of electronics engineering products testing and can be used for quality and reliability evaluation of micro- and nanoelectronics products used in equipment with long-term service life. Essence of invention: to determine potentially unstable semiconductor products (SCP) following is performed: testing parametres of products are measured; SCP are subjected to ionisation radiation; products are annealed at maximum allowable or marginal temperature for given type of product as per technical specifications (TS); in this process the measurement of testing parametres is carried out before subjecting to ionisation radiation, after subjecting and after annealing; "ionisation radiation - annealing" cycle is repeated several times, while number of cycles depends on SCP type; annealing constant is determined and according to its value products are separated by stability level.

EFFECT: increase in reliability and decrease in time of testing.