METHOD OF INCREASING THE RELIABILITY OF HYBRID AND MONOLITHIC INTEGRATED CIRCUITS Russian patent published in 2018 - IPC G01R31/28 

FIELD: electrical engineering.

SUBSTANCE: invention relates to the method for improving the reliability of semiconductor monolithic and hybrid integrated circuits (ICs) under the predetermined operating conditions. Degradation rate of informative parameters of IC is determined as a result of artificial aging. Function of the probability density of informative parameters is constructed, taking into account the technological errors of the parameters of the IC design. Trajectories of their variation in time are determined using the method of simulation based on the obtained regularities and the rate of degradation of the informative IC parameters. Moments of time of the parametric failures of all ICs in the batch are determined. Statistically, the moments of time of the parametric failures of all ICs of the batch are processed and the mean cycle between failures is determined. Nominal informative parameters of the ICs are corrected according to the criterion of maximizing the mean cycle between failures, during which the probability density function of their informative parameters in time does not exceed the limits, which are imposed by the developer. New parameters of the IC design are synthesized, which provide for the new optimal values of informative parameters according to the criterion of maximum cycle between failures.

EFFECT: increased time between failures of hybrid and monolithic ICs.

3 cl, 5 dwg