SEMICONDUCTOR VERTICALLY-EMITTING LASER WITH INTRACAVITY CONTACTS Russian patent published in 2017 - IPC H01S5/183 

FIELD: physics, instrument-making.

SUBSTANCE: invention can be used to make semiconductor vertically-emitting lasers operating in the near-infrared range. The semiconductor vertically-emitting laser with intracavity contacts comprises a semiconductor substrate (1) made of GaAs, a buffer layer (2) made of GaAs, a lower undoped distributed Bragg reflector (3), an n-type contact layer (4), an n-type electric contact (5), an n-type composite grating (6), an undoped optical cavity (7), containing an active medium based on a least three layers (8) of quantum wells, a p-type composite grating (9), comprising at least one oxide current aperture (10), a p-type contact layer (11), a p-type phase-correcting contact layer (12), a p-type electric contact (13) and an upper dielectric distributed Bragg reflector (14). The laser according to the invention has a low threshold current, high differential efficiency and low electrical resistance with small lateral dimensions of the current aperture (less than 10 mcm).

EFFECT: invention enables to create semiconductor vertically-emitting lasers with high differential efficiency and low electrical resistance.

15 cl, 3 ex, 6 dwg