PHOTOELECTRIC ELEMENT Russian patent published in 2011 - IPC H01L31/352 

FIELD: physics.

SUBSTANCE: photoelectric element comprises, at least, first transition between two semiconductor regions (4-9). At least, one of said pair comprises, at least, a part of super lattice containing first material with distributed formations of second material. Said formations feature rather small sizes that make effective super lattice forbidden zone defined by said sizes. Absorbing layer (24-26) is arranged between semiconductor regions that comprises material designed to absorb radiation to excite charge carrier, and features such thickness that defines excitation levels. At least, one of effective power zones of super lattice and one of aforesaid excitation levels are selected to match, at least, one excitation level of absorbing layer and effective power zone of super lattice.

EFFECT: efficient solar power conversion at preset production costs.

11 cl, 4 dwg